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	System
	Silicon
	SiliconDioxide
	test

PhoeniX FlowDesigner: Deal-Grove Oxidation Model for Silicon

The documentation below shows the wet and dry oxidation profile of crystalline
silicon based on the empirical model Deal-Grove Model of Oxidation.

Reference :
http://www.phoenixbv.com/Fact_sheets/oxidation_Deal_Grove_Model.pdf

The Deal-Grove Model of Oxidation is an approximation model to predict oxide thickness
prior to growth. This model does not include advanced topics, such as bird's beak forming
during a LOCOS process. However this model is a good start for modelling the standard
oxidation process. More details concering geometric simulation can be read at PhoeniX
Flow Designer Manual.

Blank wafer

Si wafer [200 mu, 20 mu]

Etch slot by RIE

Pattern the slot by RIE.

Oxidation process

Wet oxidation

Wet oxidation for 10 hours with 1523.16 kelvin
Parabolic rate coefficient B (empirical value)= 0.841276 (um^2/hr)
Linear rate coefficient BA (empirical value)= 23.8518 (um/hr)
Oxidation thickness=2.88289 mu

Dry oxidation

Dry oxidation for 10 hours with 1523.16 kelvin
Parabolic rate coefficient B (empirical value)= 0.0659512 (um^2/hr)
Linear rate coefficient BA (empirical value)= 1.74376 (um/hr)
Oxidation thickness=0.794273 mu