Legend

	System
	Si
	SiO2
	Resist
	W
	SiRN

Metal Contact

Verification Example :
* Parameter dx4 represents the size of the fourth opening of mask4.
* When dx4=0, the mask4 is too small so there will be an air-gap in the structure.
* Set dx4=5 will solve the problem.

Step 1: Si Wafer

Blank wafer Si {-100,0,110,-10}

Step 2: Oxidation

Step 3a: Directional Deposit Resist (1)

Step 3b: Develop Resist (1)

Use mask1[2]={-10,10}

Step 4: BHF etch

Step 5: Strip Resist (1)

Step 6: Isotropic Deposit Metal(W) (1)

Step 7a: Directional Deposit Resist (2)

Step 7b: Develop Resist (2)

Use mask2[4]={-100,-50,15,100}

Step 8: H2O2 Etch for Metal(W) (1)

Step 9: Strip Resist (2)

Step 10: Directional Deposit SiRN (1)

Step 11a: Directional Deposit Resist (3)

Step 11b: Develop Resist (3)

Use mask3[2]={-40,-20}

Step 12: RIE etch (1)

Step 13: Strip Resist (3)

Step 14: Isotropic Deposit Metal(W) (2)

Step 15a: Isotropic Deposit Resist (4)

Step 15b: Develop Resist (4)

Use mask4[4]={-100,-55,45,95}
Variable dx4=5 um

Step 16: H2O2 Etch for Metal(W) (2)

Step 17: Strip Resist (4)

Step 18: Directional Deposit SiRN(2)

Step 19a: Directional Deposit Resist (5)

Step 19b: Develop Resist (5)

Use mask5[2]={20,40}